Study on the Treatment of Hydrogen Chloride Gas used in Semiconductor Process by using Gas Adsorption Agents such as Zeolite Resins, ZnO, and AgMnO3

제올라이트 수지 및 ZnO, AgMnO3 등의 무기흡착제를 이용한 반도체 공정에서 사용되는 염산가스의 처리 및 측정에 관한 연구

  • Park, Jeong-Jun (Department of Chemistry, College of Natural Sciences) ;
  • Lim, H.B. (Department of Chemistry, College of Natural Sciences) ;
  • Hwang, Cheong-Soo (Department of Chemistry, College of Natural Sciences)
  • 박정준 (단국대학교 자연과학대학 화학과) ;
  • 임흥빈 (단국대학교 자연과학대학 화학과) ;
  • 황청수 (단국대학교 자연과학대학 화학과)
  • Received : 2003.03.20
  • Accepted : 2003.05.02
  • Published : 2003.06.25


Hydrogen Chloride is among the most problematic gases used in semiconductor process. It raises serious environmental and health problems due to its extreme toxicity. This study is to develop a method to effectively remove hydrogen chloride gas during the process by using various types of inorganic gas adsorption agents, which have not been attempted in the conventional methods. The removal efficiency of the gas was both qualitatively and quantitatively measured by a FT-IR spectrophotometer. The whole device for the measurement has been designed and built in our lab. The removal efficiencies of hydrogen chloride gas were compared between those tested resins; zeolite A, modified AgA zeolite, ZnO, and $AgMnO_3$. The experimental result revealed that ZnO showed the best efficiency that had removed 0.067 g of HCl per 1 g of the resin used.


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