DC and RF Characteristics of AlGaN/InGaN HEMTs Grown by Plasma-Assisted MBE

AlGaN/InGaN HEMTs의 고성능 초고주파 전류 특성

  • 이종욱 (경희대학교 전파통신공학과)
  • Published : 2004.08.01

Abstract

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

Keywords

GaN;InGaN;Molecular Beam Expitaxy(MBE);HEMTs

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