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Effects of Friction Energy on Polishing Results in CMP Process

CMP 공정에서 마찰에너지가 연마결과에 미치는 영향

  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 김구연 (부산대학교 정밀기계공학과) ;
  • 김형재 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2004.11.01

Abstract

The application of chemical mechanical polishing(CMP) has a long history. Recently, CMP has been used in the planarization of the interlayer dielectric(ILD) and metal used to form the multilevel interconnections between each layers. Therefore, much research has been conducted to understand the basic mechanism of the CMP process. CMP performed by the down force and the relative speed between pad and wafer with slurry is typical tribo-system. In general, studies have indicated that removal rate is relative to energy. Accordingly, in this study, CMP results will be analyzed by a viewpoint of the friction energy using friction force measurement. The results show that energy would not constant in the same removal rate conditions

Keywords

Chemical Mechanical Polishing;Friction Energy;Coefficient of Friction;Removal Rate

References

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Cited by

  1. Analysis of Acoustic Emission Signal Sensitivity to Variations in Thin-film Material Properties During CMP Process vol.38, pp.8, 2014, https://doi.org/10.3795/KSME-A.2014.38.8.863
  2. Effect of Oxidizer on the Polishing in Cadmium Telluride CMP vol.32, pp.1, 2015, https://doi.org/10.7736/KSPE.2015.32.1.69
  3. Effect of Relative Surface Charge of Colloidal Silica and Sapphire on Removal Rate in Chemical Mechanical Polishing pp.2198-0810, 2019, https://doi.org/10.1007/s40684-019-00020-9