A Study on Variation of the Sidewall Angle of a Thick Photoresist on the Wavelength and the Proximity gap

노광파장과 근접거리에 따른 두꺼운 감광막의 측면기울기 변화에 관한 연구

  • 한창호 (서울대학교 전기ㆍ컴퓨터공학부) ;
  • 김학 (서울대학교 전기ㆍ컴퓨터공학부) ;
  • 김현철 (서울대학교 전기ㆍ컴퓨터공학부) ;
  • 전국진 (서울대학교 전기ㆍ컴퓨터공학부)
  • Published : 2004.03.01

Abstract

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.