Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 3 Issue 1
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- Pages.27-30
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- 2004
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- 1738-2270(pISSN)
Abstract
In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.