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Surface Lapping Process and Vickers Indentation of Sapphire Wafer for GaN Epitaxy

GaN 증착용 사파이어 웨이퍼의 표면가공에 따른 압흔 특성

  • Published : 2005.04.01

Abstract

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

Keywords

Blue-LED Sapphire Wafer;Thermal Annealing;Indentation;Recrystallization;FWHM

References

  1. Fremy, E. and Verneuil, A. 1887, Acad. Sci. Vol. 85, pp. 1029
  2. Kh. S. Bagdasarov, 1974, 'Synthesis of Large Single Crystals of Corundum,' from 'Ruby and Sapphire' edited by. L. M. Belyaev (Nauka Pub. Moscow), pp. 15-38
  3. Klassen-Nekiyudova, M. V., 1974, 'Control of the Processes of Mechanical Treatment of Corundum using Surfactant Liquids,' from 'Ruby and Sapphire' edited by L. M Belyaev, (Nauka Pub. Moscow), pp. 334-338
  4. Kim, K. and Koh, J. C., 2000, 'GaN Epitaxial Growths on Chemically and Mechanically Polished Sapphire Wafers Grown by Bridgeman Method,' Journal of the Korea Association of Crystal Growth, Vol. 10, No. 5, p. 350
  5. Shin Gwisu, Whang Sungwon, Kim Keunjoo and Suh Namsup, 2004, 'Chemo-Mechanical Polishing Process of Sapphire Wafers for GaN Semiconductor Thin Film Growth,' Trans. of the KSME A, Vol. 28, No. 1, pp. 85-91 https://doi.org/10.3795/KSME-A.2004.28.1.085
  6. Cho Sunghwan, Kim Hyoungjae, Kim Hoyoun, Seo Heondeok, Kim Kyoungjun and Jung Haedo, 2001, 'Study on the Improvement of the Slurry Dispersibility in CMP,' Trans. of the KSME A, Vol. 25, No. 10, pp. 1535-1540
  7. Cho Sunghwan, Kim Hyoungjae, Kim Kyoungjun and Jung Haedo, 2002, 'The Study on the CMP of Transparent Conductive ITO Thin Film for the Organic Electro-Luminescence Display,' Trans. of the KSME A, Vol. 26, No. 5, pp. 975-985
  8. Reisman, A., Berkenblit M. and Cuomo, J., 1971, 'The Chemical Polishing of Sapphire and MgAl Spinel,' J. of Chan. Electrochem. Soc., Vol, 118, No. 10, p. 1653 https://doi.org/10.1149/1.2407804
  9. Robinson, pp. H. and Wance, R. O., 1973, 'The Chemical Polishing of Sapphire and Spinel,' RCA Review, p. 34
  10. Lee Yunhee, Jang Jaeil and Kwon, Dongil, 2002, 'Evaluation of Thin Film Residual Stress through the Theoretical Analysis of Nano- indentation Curve,' Trans. of the KSME A, Vol. 26, No. 7, pp. 1270-1279 https://doi.org/10.3795/KSME-A.2002.26.7.1270
  11. Preston, F. W., 1927, 'The Theory and Design of Plate Glass Polishing Machines,' J. Soc. of Glass Tech., pp. 214-256
  12. Marshall, D. B. and Evans. A. G., 1981, 'Reply to Comment on Elastic/Plastic Indentation Damage in Ceramics: The Median/Radial Crack System,' Communication of the American Ceramic Society, C-182 https://doi.org/10.1111/j.1151-2916.1981.tb15909.x
  13. Lee Ouksub, Son Insoo, Hong Sungkyung, Park WonKu and Hwang Sunkeun, 1995, 'Measurement Fracture Toughness of WC-Co Composites by Micro-Vickers Indentations Cracks,' Journal of KSPE, Vol. 12, No. 2, pp. 5-13
  14. Yoon Gangjoong and Jeon Hyeontag, 1995, 'The Effects of Ti Film Thickness and Si Substrate Orientations on Phase Transitions of $TiSi_2$,' Korean Journal of the Materials Research, Vol. 5, No. 7, pp. 820-829
  15. Park KiTae, Lee Byungryong, Park Kyuyeol and Hong Dongpyu, 2000, 'A study on the Fracture Behavior in Silicon Wafer using the Ultra-Precision Micro Positioning System,' Journal of the Korean Society of Machine Tool Engineers, Vol. 9, No. 1, pp. 38-44
  16. Lee Ouksub, 1997, 'Residual Stress Interference by Two Micro-Vickers Indentations,' KSME International Journal, Vol. 11, No. 4, pp. 379-385 https://doi.org/10.1007/BF02945076
  17. Chang, Chuan C., 1968, 'LEED Studies of the (0001) Face of ${\alpha}-Alumina$,' Journal of Applied Physics, Vol. 39, No. 11, pp. 5570-5573 https://doi.org/10.1063/1.1656015
  18. French, T. M. and Somorjai, G. A., 1970, 'Composition and Surface Structure of the (0001) Face of ${\alpha}-Alumina$ by Low-Energy Electron Diffraction,' The Journal of Physical Chemistry, Vol. 74, No. 12, pp. 2489-2491 https://doi.org/10.1021/j100706a014