Development on the High Concentration Ozone Generator System for the Semiconductor Photoresist Strip Process

반도체 감광막 제거공정 적용을 위한 고농도 오존발생장치 개발

  • 손영수 (한국기계연구원 지능형정밀기계연구본부) ;
  • 함상용 (한국기계연구원 지능형정밀기계연구본부)
  • Published : 2006.12.01

Abstract

we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

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