Journal of Electrical Engineering and Technology
- Volume 1 Issue 4
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- Pages.543-545
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- 2006
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- 1975-0102(pISSN)
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- 2093-7423(eISSN)
DOI QR Code
Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs
- Yu, Jae-In (Department of Physics, Yeungnam University) ;
- Lim, Jin-Hwan (Yu Electronics Company) ;
- Yu, Jae-Yong (Yu Electronics Company) ;
- Kim, Ki-Hong (Department of Visual Optics, Kyungwoon University)
- Published : 2006.12.01
Abstract
Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.
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