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Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs

  • Published : 2006.12.01

Abstract

Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

References

  1. A.M. Goodman, J. Appl. Phys. 32 (1961) 2550 https://doi.org/10.1063/1.1728351
  2. F391-96, Annual Book of ASTM Standards, American Society for Testing and Materials, Philadelphia, PA, 1996
  3. Many A, Goldstein Y, Grover NB. Semiconductor surfaces. North-Holland, Amsterdam, 1963
  4. Sze SM. Physics of semiconductor surfaces 2nd ed. John Wiley, New York, 1981
  5. Madelung O. (Ed.), Landolt Bomstein numerical data. Springer,Berlin, 1987
  6. Q. Liu, H.E. Ruda, G.M. Chen, M. Simard-Normandin, J. Appl. Phys. 79 (1996) 7790 https://doi.org/10.1063/1.362386
  7. S. Kumar, T. Ganguli, P. Bhattacharya, U.N. Roy, S.S. Chandvankar, B.M. Arora, Appl. Phys. Lett. 72 (1998) 3020 https://doi.org/10.1063/1.121527