Influence of the Substrate Temperature on the Characterization of ZnO Thin Films

기판온도가 ZnO 박막의 특성에 미치는 영향

  • 정양희 (전남대학교 전기 및 반도체공학과) ;
  • 권오경 (한국교육기술대학교 기계공학과) ;
  • 강성준 (전남대학교 정보소재공학과)
  • Published : 2006.12.30


We fabricated ZnO thin film successfully by using RF magnetron sputtering and investigated its potential for being utilized as the key material of piezoelectric device with the characterization of ZnO thin film such as such as crystallinity, surface morphology, c-axis orientation, film density. In thin study, $Ar/O_2$ gas ratio is fixed 70/30, RF power 125W, working pressure 8mTorr, distance between substrate and target 70mm, but the substrate temperature is varied from room temperature to $400^{\circ}C$. The relative intensity ($I_{(002)}/I_{(100)}$) or (002) peak in ZnO thin film deposited at $300^{\circ}$ was exhibited as 94%, then its FWHM was $0.571^{\circ}C$. Also, from the surface morphology evaluated by SEM and AFM, the film deposited at $300^{\circ}C$ showed uniform particle shape and excellent surface roughness of 4.08 m. The tendency of ZnO thin film density was exhibited to be denser with increasing substrate temperature but slightly decreased at near $400^{\circ}C$.


  1. Frans C. M. Van De Pol, 'Thin Fihn ZnO-properties and Applications', Ceramic Bulletin, 69, pp.1559-1965 (1990)
  2. T. Mitsuyu, S. Ono and K. Wasa, 'Deposition of Highly Oriented ZnO Films by Spray Pyrolysis and Their Structural, Optical and Electrical Charaeteriazation', J. Appl. Phys., 44. pp. 1061 (1984)
  3. D. Redfield, 'Multiple-Pass Thin Film Silicon Solar CelI', Appl. Phys. Lett. 25. pp. 647, 1974
  4. S.B. Krupanidhi and M. sayer, 'Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide', J. Appl. Phys., 56, pp. 3308-3317 (1984)
  5. Sorab K. Gahndi, and Robert J. Field, 'Highly oriented zinc oxide films grown by the oxidation of diethylzinc', Appl. Phys. Let., 37, pp. 449 (1980)
  6. R. M. Malbon, D. J. Walsh, and D. K. Winslow, 'Zinc-Oxide Film Microwave Acoustic Transducers', Appl. Phys. Lett., 10, pp. 9,1967
  7. M. Matsuoka and K. Ono, 'Photochromism and anomalous crystallite orientation of ZnO films prepared by a sputtering-type electron cyclotron resonance microwave plasma', Appl. Phys. Lett., 53(15), pp. 1393 (1988)
  8. N. J. lanno, L. McConville, N. Shaikh, S. Pittal and P. H. Aynder, 'Characterization of pulsed laser deposited zinc oxide', Thin Solid Films, 220, pp. 92 (1992)
  9. K. Ohji, O. Yamazaki, K. Wasa, and S. Hayakawa, 'New sputtering system for manuacturing Zno thin film SAW devices', J. Vac. Sci. Technol., 15(4), pp 1601-1604 (1978)
  10. H. S. Nalwa, Handbook of Thin Film Materials: Ferroelectric and Dielectric Thin Films, vol. 3, Academic Press. pp291-298 (2002)
  11. Su-Shia Lin et al., 'The effects of r.f power and substrate temperature on the properties of Zno films', Surface and Technology, 176, pp. 173-181 (2004)