Moisture Induced Hump Characteristics of Shallow Trench-Isolated nMOSFET

Shallow Trench Isolation 공정에서 수분에 의한 nMOSFET의 Hump 특성

  • 이영철 (목포해양대학교 해양전자통신공학부)
  • Published : 2006.12.30

Abstract

In this parer, hump characteristics of short-channel nMOSFETs induced by moistures of the ILD(inter-layer dielectric) layer in the shallow trench isolation (STI) process are investigated and the method for hump suppression is proposed Using nMOSFETs with various types of the gate and a measurement of TDS-APIMS (Thermal Desorption System-Atmospheric Pressure ionization Mass Spectrometry), hump characteristics were systematically analyzed and the systemic analysis based hump model was presented; the ILD layer over poly-Si gate of nMOSFET generates moistures, but they can't diffuse out of the SiN layer due to the upper SiN layer. Consequently, they diffuses into the edge between the gate and STI and induces short-channel hump. In order to eliminate moisture in the ILD layer by out-gassing method, the annealing process prior to the deposition of the SiN layer was carried out. As the result, short-channel humps of the nMOSFETs were successfully suppressed.

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