High-Q Resonator with Substrate Integrated Waveguide(SIW) Structure

높은 Q 값을 갖는 기판 집적형 도파관(SIW) 공진기

  • Yun Tae-Soon (RFIC Research and Education Center, Kwangwoon University) ;
  • Nam Hee (RFIC Research and Education Center, Kwangwoon University) ;
  • Lee Jong-Chul (RFIC Research and Education Center, Kwangwoon University)
  • Published : 2006.04.01

Abstract

In this paper, a resonator with the substrate integrated waveguide(SIW) structure at the satellite communication band is presented. The SIW structure is realized by via-holes on the dielectric substrate and has an advantage of integration with other circuits. For the measurement, a designed back-to-back transition has the insertion loss of 0.4 dB at 18 GHz. Also, the quality factor of the resonator with the SIW structure including back-to-back transition is obtained to be 222. The high-Q resonator with the SIW structure can be used in filter, oscillator, and voltage controlled oscillator.

References

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