The Process of Anode Oxidation on $Ta_2O_5$ by Electrolyte of Ammonium Tartrate

Ammonium Tartrate를 전해질로 사용한 $Ta_2O_5$의 음극 산화 공정

  • 허창우 (목원대학교 정보.전자.영상 공학부)
  • Published : 2006.06.01

Abstract

In this paper, we establish a mode oxidation process for formation of $Ta_2O_5$ insulator film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of Ta2O5/electrolyte. As a result of the measurement on the electrical property of $Ta_2O_5$ insulator film, when the thickness of the insulator film is $1500\AA$, the breakdown voltage is 350volts Ind dielectric constant is 29.

References

  1. Chang W. Hur, 'Method of Making Thin Film Transistors', United States Patent, Patent No.5,306,653, Apr. 1994
  2. R.V.R. Murthy, Mechanisms underlying leakage current in inverted staggered a-Si:H thin film transistors, Fourth Symp. on Thin Film Transistor Technologies, Boston, Nov. 1-6,1998
  3. 이규정, 류광렬, 허창우, '산화물 반도체 박막 가스센서어레이의 제조 및 수율 개선', 한국해양정보통신학회 논문지 vol.6, No.2, pp. 315-355, 2002
  4. 허창우, '강유전성 박막의 형성 및 수소화된 비정질실리콘과의 접합특성', 한국해양정보통신학회 논문지 vol.7,No.3,pp.468-473, 2003
  5. 윤재석, 허창우, '게이트 산화막에 따른 n-MOSFET 의 금속 플라즈마 피해', 한국해양정보통신학회 논문지 vol.3,No.2,pp.471-475, 1999