Properties of TCO Fabricated with Annealing Temperature of Al Doped ZnO Film for Solar Cell Application

Al Doped ZnO 박막의 열처리에 따른 태양전지용 투명전도막 특성

  • Kim, Bong-Seok (Department of Information and Communication, Sungkyunkwan University) ;
  • Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University) ;
  • Kim, Young-Sung (Advanced Material Process of Information Technology, Sungkyunkwan University)
  • 김봉석 (성균관대학교 전자전기 및 컴퓨터공학과) ;
  • 김응권 (성균관대학교 전자전기 및 컴퓨터공학과) ;
  • 김용성 (성균관대학교 정보통신용 신기능성 소재 및 공정연구센터)
  • Published : 2006.09.01


The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.


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