An Offset-Compensated LVDS Receiver with Low-Temperature Poly-Si Thin Film Transistor

  • Min, Kyung-Youl (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Yoo, Chang-Sik (Department of Electronics and Computer Engineering, Hanyang University)
  • Received : 2006.06.23
  • Published : 2007.02.28

Abstract

The poly-Si thin film transistor (TFT) shows large variations in its characteristics due to the grain boundary of poly-crystalline silicon. This results in unacceptably large input offset of low-voltage differential signaling (LVDS) receivers. To cancel the large input offset of poly-Si TFT LVDS receivers, a full-digital offset compensation scheme has been developed and verified to be able to keep the input offset under 15 mV which is sufficiently small for LVDS signal receiving.