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Properties Electric of AIN Thin Film on the Si and GaAs Substrate

Si와 GaAs기판 위에 AIN 박막의 전기적 특성

  • 박정철 (경원대학교 IT대학 전자공학) ;
  • 추순남 (경원대학교 공과대학 전기공학) ;
  • 권정렬 (명지대학교 공과대학 전기공학과) ;
  • 이헌용 (명지대학교 공과대학 전기공학과)
  • Published : 2008.01.01

Abstract

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

Keywords

Si;GaAs;Flat band voltage;AIN thin film;Reactive sputtering method

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