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Modeling of Anode Voltage Drop for PT-IGBT at Turn-off

턴-오프 시 PT-IGBT의 애노드 전압 강하 모델링

  • 류세환 (건국대학교 전기공학과) ;
  • 이호길 ((주) 삼성전자 반도체총괄 메모리사업부) ;
  • 안형근 (건국대학교 전기공학과) ;
  • 한득영 (건국대학교 전기공학과)
  • Published : 2008.01.01

Abstract

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

Keywords

PT-IGBT;Buffer layer;Carrier distiribution;Modeling

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