X-Band Oscillator Using SIW Cavity Resonator Based on Planar Circuit Technique

평면회로 기법에 의한 SIW Cavity 공진기를 이용한 X-밴드 발진기

  • 이현욱 (광운대학교 전파공학과) ;
  • 이일우 (광운대학교 전파공학과) ;
  • 남희 (광운대학교 전파공학과) ;
  • 이종철 (광운대학교 전파공학과)
  • Published : 2008.02.29


The substrate integrated waveguide (SIW) structure can be approximated as the rectangular waveguide using common dielectric substrate with via-holes. To realize reflection-type resonator, $50-{\omega}$ microstrip line can be used for coupling with the center plane of the cavity. The oscillator is designed to operate at 9.45 GHz using the reflection-type SIW cavity resonator. The phase noise of oscillator shows -98.1dBc/Hz at 100 KHz offset. In experiment, the reflection type SIW cavity resonator improves the loaded quality factor making the low phase noise oscillator possible. Due to the entirely planar structure of this resonator, this technique can also be adequate in oscillator applications for a low cost and low phase noise performance.