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Optimization of Performances in GaN High Power Transistor Package

질화갈륨 고출력 트랜지스터 패키지의 성능 최적화

  • 오성민 (㈜RFHIC) ;
  • 임종식 (순천향대학교 전기통신공학과) ;
  • 이용호 (㈜RFHIC) ;
  • 박천선 (순천향대학교 전기통신공학과) ;
  • 박웅희 (강원대학교 삼척캠퍼스 전자공학과) ;
  • 안달 (순천향대학교 전기통신공학과)
  • Published : 2008.06.30

Abstract

This paper describes the optimized output performances such as output power and the third order intermodulation in GaN high power transistor packages which consist of chip die, chip capacitors, and wire bonding. The optimized output power according to wire bonding techniques, and third order intermodulation performances according to wire bonding and bias conditions are discussed. In addition, it is shown through the nonlinear simulation that how the output performances are sensitive to the inductance values which are realized by wire bonding for matching network in the limited package area.

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