Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist

포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구

  • 김성훈 (동우화인켐 전자재료연구소) ;
  • 김상태 (동우화인켐 전자재료연구소)
  • Received : 2009.11.02
  • Accepted : 2009.11.24
  • Published : 2009.12.31

Abstract

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.