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NO Gas Sensing Properties of ZnO-SWCNT Composites

산화아연-단일벽탄소나노튜브복합체의 일산화질소 감지 특성

  • Jang, Dong-Mi (Department of Materials Engineering, Chungnam National University) ;
  • Ahn, Se-Yong (Department of Materials Engineering, Chungnam National University) ;
  • Jung, Hyuck (Department of Materials Engineering, Chungnam National University) ;
  • Kim, Do-Jin (Department of Materials Engineering, Chungnam National University)
  • 장동미 (충남대학교 공과대학 재료공학과) ;
  • 안세용 (충남대학교 공과대학 재료공학과) ;
  • 정혁 (충남대학교 공과대학 재료공학과) ;
  • 김도진 (충남대학교 공과대학 재료공학과)
  • Received : 2010.09.07
  • Accepted : 2010.11.04
  • Published : 2010.11.27

Abstract

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

Acknowledgement

Supported by : 한국과학재단

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