Process Optimization Approached by Design of Experiment Method for Ga-doped ZnO Thin Films

DOE 법에 의한 Ga 첨가된 ZnO 박막의 공정조건 탐색

  • 이득희 (한국과학기술연구원 에너지재료연구단, 고려대학교 전기전자컴퓨터공학과) ;
  • 김상식 (고려대학교 전기전자전파공학부) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단)
  • Published : 2010.01.01


Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about $1.8'10^{-4}Wcm$ which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.



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