Improved Contact Characteristics in a Single Tin-Oxide Nanowire Device by a Selective Reactive Ion Etching (RIE) Process

선택 건식에칭에 의한 단일 산화주석 나노와이어 소자의 접촉 특성 개선

  • 이준민 (고려대 마이크로/나노시스템 협동) ;
  • 김대일 (고려대 화공생명공학과) ;
  • 하정숙 (고려대 화공생명공학과) ;
  • 김규태 (고려대 전기전자전파공학부)
  • Published : 2010.01.01


Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.


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