The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions

원거리 플라즈마 화학기상증착법을 사용하여 증착한 비정질 탄화규소 막의 증착조건에 따른 특성 및 증착 균일도 변화

  • Cho, Sung-Hyuk (Department of Advanced Material Science and Engineering, Yonsei University) ;
  • Choi, Yoo-Youl (Department of Advanced Material Science and Engineering, Yonsei University) ;
  • Choi, Doo-Jin (Department of Advanced Material Science and Engineering, Yonsei University)
  • 조성혁 (연세대학교 신소재공학과) ;
  • 최유열 (연세대학교 신소재공학과) ;
  • 최두진 (연세대학교 신소재공학과)
  • Received : 2010.03.08
  • Accepted : 2010.05.17
  • Published : 2010.05.31


a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.



Supported by : 방위사업청과 국방과학연구소


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