DOI QR코드

DOI QR Code

Characteristics silicon pressure sensor using dry etching technology

건식식각 기술 이용한 실리콘 압력센서의 특성

  • Received : 2010.01.12
  • Accepted : 2010.03.15
  • Published : 2010.03.31

Abstract

In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

References

  1. Y. T. Lee, H. Takao, and M. Ishida, "ICP-RIE를 이용한 저압용 실리콘 압력센서 제작", 센서학회지, 제16권, 제2호, pp. 126-131, 2007. https://doi.org/10.5369/JSST.2007.16.2.126
  2. Y. Kanda and K. Yamamura, "Four-terminal- gauge quasi-circular and square diaphragm silicon pressure sensors", Sensors and Actuators, vol. 18, pp. 247-257, 1989. https://doi.org/10.1016/0250-6874(89)87032-5
  3. M. Bao and Y. Wang, "Analysis and design of a four-terminal silicon pressure sensor at the centre of a diaphragm", Sensors and Actuators, vol. 12, pp. 49-56, 1987. https://doi.org/10.1016/0250-6874(87)87005-1
  4. Y. T. Lee, H. D. Seo, M. Ishida, S. Kawahito, and T. Nakamura, “High temperature pressure sensor using double SOI structures with two $Al_2O_3$ films”, Sensor and Actuators A: Physical, vol. 158 pp. 59-64, 1994.
  5. Y. T. Lee, H. D. Seo, and M. Ishida, “Fabrication of high-temperature silicon pressure sensor using SDB-SOI techmology”, Sesnors and Materials, vol. 17, No.5, pp. 269-276, 2005.
  6. 김미목, 남태철, 이영태, "고온용 실리콘 압력센서 개발", 센서학회지, 제13권, 제3호, pp. 175-181, 2004. https://doi.org/10.5369/JSST.2004.13.3.175
  7. 주리아, 도태성, 이종녕, 서희돈, "전단응력형 집적화 압력센서의 최적설계", 전자공학회논문지, 제35권, T편, 제1호, pp. 75-81, 1998.
  8. 권태하, 이우일, "전단 압저항 효과를 이용한 실리콘 압력센서", 전자공학회학회지, 제25권, 제3호, pp. 70-77, 1988.