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A Study on the Electrical Characteristics with Design Parameters in GaN Power Static Induction Transistor

GaN Power SIT의 설계변수에 따른 전기적 특성변화에 관한 연구

  • Oh, Ju-Hyun (School of Electrical Engineering, Korea University) ;
  • Yang, Sung-Min (School of Electrical Engineering, Korea University) ;
  • Jung, Eun-Sik (School of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (School of Electrical Engineering, Korea University)
  • 오주현 (고려대학교 전기공학과) ;
  • 양성민 (고려대학교 전기공학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Received : 2010.07.21
  • Accepted : 2010.08.23
  • Published : 2010.09.01

Abstract

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

Keywords

Wide bandgap;GaN power device;Breakdown voltage

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