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Effect of Ga Dopants on Electrical and Optical Characteristics of ZnO Thin Films

Ga 첨가물이 ZnO의 전기적, 광학적 특성에 미치는 영향

  • Kim, Jun-Sik (Department of Materials Engineering, Chungbuk University) ;
  • Jang, Gun-Eik (Department of Materials Engineering, Chungbuk University)
  • 김준식 (충북대학교 신소재공학과) ;
  • 장건익 (충북대학교 신소재공학과)
  • Received : 2010.07.16
  • Accepted : 2010.08.23
  • Published : 2010.09.01

Abstract

ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of $10^{-4}{\Omega}cm$ is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was $8.9{\times}10^{-4}{\Omega}cm$. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

Keywords

GZO;Crystal orientation;Resistivity;Transmittance

Acknowledgement

Supported by : 충북대학교

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