A Study on the Design of a Pulse-Width Modulation DC/DC Power Converter

Lho, Young-Hwan

  • Published : 2010.09.15


DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.


Pulse-width modulation DC-DC converter;Metal-oxide semiconductor field effect transistor switching;On-resistance;Power efficiency


  1. Adell, P. C., Schrimpf, R. D., Choi, B. K., Holman, W. T., Attwood, J. P., Cirba, C. R., and Galloway, K. F. (2002). Totaldose and single-event effects in switching DC/DC power converters. IEEE Transactions on Nuclear Science, 49, 3217-3221.
  2. Adell, P. C., Schrimpf, R. D., Holman, W. T., Boch, J., Stacey, J., Ribero, P., Sternberg, A., and Galloway, K. F. (2003). Totaldose and single-event effects in DC/DC converter control circuitry. IEEE Transactions on Nuclear Science, 50, 1867-1872.
  3. Cadence Design Systems (2004). SPICE Reference Guide. San Jose, CA: Cadence Design Systems, Inc.
  4. Lee, S. H. and Jung, J. Y. (2006). Power Electronics Engineering. Seoul: Hyung Seol Publication Inc. pp. 147-153 (in Korean).
  5. Lho, Y. H., Lee, S. Y., and Kang, P. H. (2007). Total ionizing dose effects on the IGBT performance for a DC-DC converter. ICMIT 2007: Mechatronics, MEMS, and Smart Materials, Gifu, Japan. pp. 57-62.
  6. Lho, Y. H. and Kim, K. Y. (2005). Radiation effects on the power MOSFET for space applications. ETRI Journal, 27, 449-452.
  7. Roh, E. C., Jung, K. B., Choi, N. S. (1997). Power Electronics. Seoul: Mun Eun Dang. pp. 190-218 (in Korean).