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Localized Oxidation of (100) Silicon Surface by Pulsed Electrochemical Processes Based on AFM

AFM 기반 Pulse 를 이용한 전기화학적 가공

  • Lee, Jeong-Min (Dep. of Mechanical Design Engineering, Chosun Univ.) ;
  • Kim, Sun-Ho (Dep. of Mechanical Design Engineering, Chosun Univ.) ;
  • Park, Jeong-Woo (Dep. of Mechanical Design Engineering, Chosun Univ.)
  • 이정민 (조선대학교 기계설계공학과) ;
  • 김선호 (조선대학교 기계설계공학과) ;
  • 박정우 (조선대학교 기계설계공학과)
  • Received : 2010.05.13
  • Accepted : 2010.08.23
  • Published : 2010.11.01

Abstract

In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.

Keywords

Electrochemical Nanomachining;Oxidation;Scanning-Probe Lithography;AFM;Nanopatterning

Acknowledgement

Supported by : 한국학술진흥재단

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