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Optimization of Laser Process Parameters for Realizing Optimal Via Holes for MEMS Devices

MEMS 소자의 비아 홀에 대한 레이저 공정변수의 최적화

  • Received : 2010.06.07
  • Accepted : 2010.08.27
  • Published : 2010.11.01

Abstract

In the case of micro.electro-mechanical system (MEMS) devices, the quality of punched via hole is one of the most important factors governing the performance of the device. The common features that affect the laser micromachining of via holes drilled by using Nd:$YVO_4$ laser are described, and efficient optimization methods to measure them are presented. The analysis methods involving an orthogonal array, analysis of variance (ANOVA), and response surface optimization are employed to determine the main effects and to determine the optimal laser process parameters. The significant laser process parameters were identified and their effects on the quality of via holes were studied. Finally, an experiment in which the optimal levels of the laser process parameters were used was carried out to demonstrate the effectiveness of the optimization method.

Keywords

Silicon Wafer;Nd:$YVO_4$ Laser;Via Hole Processing;Design of Experiment;Chebyshev Orthogonal Polynomials

Acknowledgement

Supported by : 동아대학교

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