Effect of oxygen on the threshold voltage of a-IGZO TFT

  • Chong, Eu-Gene (Nanoelectronics, University of Science and Technology) ;
  • Chun, Yoon-Soo (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Seung-Han (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Nanoelectronics, University of Science and Technology)
  • Received : 2010.05.14
  • Accepted : 2011.03.29
  • Published : 2011.07.01


Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.


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