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A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology

0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기

  • 김경민 (고려대학교 전기전자전파공학부) ;
  • 김남형 (고려대학교 전기전자전파공학부) ;
  • 이재성 (고려대학교 전기전자전파공학부)
  • Received : 2012.01.03
  • Accepted : 2012.01.06
  • Published : 2012.02.29

Abstract

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

Keywords

VCO;Push-Push;MOS Varactor

Acknowledgement

Supported by : 한국연구재단

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