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The Study of Transient Radiation Effects on Commercial Electronic Devices

즉발감마선에 의한 상용전자소자의 피해현상분석 연구

  • 오승찬 (충남대학교 공대 전기공학과) ;
  • 이남호 (한국원자력연구원) ;
  • 이흥호 (충남대학교 공대 전기공학과)
  • Received : 2012.08.03
  • Accepted : 2012.08.29
  • Published : 2012.10.01

Abstract

In this study, we carried out transient radiation test for identify failure situation by a transient radiation effect on operational amplifier devices. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this test, we has found that a serious failure as a burn-out effect due to overcurrent on the partial electronic devices.

Keywords

Pulsed gamma-ray;Transient radiation effect;Total ionizing dose effect

Acknowledgement

Supported by : 국방과학연구소

References

  1. Lewis Cohn and Al Wolicki and Mayrant Simons and Clay Rogers and Alfred Costantine, "Transient Radiation Effects on Electronics (TREE) Handbook ", Defense Nuclear Agency 6801 Telegraph Road Alexandria, VA 2231-3398, December 1995
  2. MIL-STD-883G 1020.1, "Dose rate induced latchup test procedure", (28, February 2006)
  3. MIL-STD-883G 1021.2 "Dose rate upset testing of ditital microcircuits", (28, February 2006)
  4. OH S.C, Lee,N.H, Lee H.H, "Investigation of Transient Radiation Effects in CMOS ICS Using the TCAD Simulation and Experiment" Juornal of the Korea Physical Society, Vol.59, No.2, August, 2011
  5. George C. Messenger and Milton S. Ash, "The Effects of Radiation On Electronic Systems", VAN NOSTRAND REINHOLD COMPANY, New York, May 14, 1992

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