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Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Park, Jonghyurk (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Shin, Jae-Heon (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2012.05.25
  • Accepted : 2012.09.06
  • Published : 2012.12.31

Abstract

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

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