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Influence of Substrate Temperature on the TiC Thin Films Prepared by Unbalanced Magnetron Sputtering Method

비대칭 마그네트론 스퍼터링 방법으로 제조된 TiC 박막의 기판온도 영향

  • Park, Yong-Seob (Dept. of Photoelectronics Information, Chosun College of Science and Technology) ;
  • Lee, Jae-Hyeong (School of Electronic and Electrical Engineering, Sungkyunkwan University)
  • 박용섭 (조선이공대학교 광전자정보과) ;
  • 이재형 (성균관대학교 전자전기공학부)
  • Received : 2013.01.16
  • Accepted : 2013.01.28
  • Published : 2013.02.01

Abstract

In this work, we have fabricated TiC films by using unbalanced magnetron sputtering method with graphite and Ti targets for contact strip application of electric railway. TiC films were deposited with various substrate temperatures. We investigated various properties of TiC films prepared with various substrate temperatures, such as the hardness, surface roughness, friction coefficient, resistivity, FESEM (Field Emission Scanning Electron Microscopy), HRTEM (High Resolution Transmission Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy). The hardness and friction coefficient properties of TiC films were improved with increasing substrate temperature. These results indicate that the improvement of hardness and resistivity is related to the increase of sp2 clusters in TiC films. And also, the resistivity value of TiC films were decreased with increasing substrate temperature.

Acknowledgement

Supported by : 한국연구재단

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