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Effects of Nitrogen Defect on Magnetism of Cu-doped InN: First-principles Calculations

  • Kang, Byung-Sub (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Chae, Kwang-Pyo (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Lee, Haeng-Ki (Department of Radiotechnology, Suseong College)
  • Received : 2013.01.02
  • Accepted : 2013.05.01
  • Published : 2013.06.30

Abstract

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

Keywords

Cu-doped InN;first-principles;nitrogen defect;ferromagnetism

Acknowledgement

Supported by : Konkuk University

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