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Polymer thin film organic transistor characteristics with plasma treatment of interlayers

플라즈마 표면처리에 따른 유기트랜지스터 특성

Lee, Boong-Joo
이붕주

  • Received : 2013.04.08
  • Accepted : 2013.06.20
  • Published : 2013.06.30

Abstract

In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with $O_2$ plasma. As results, the surface energy of organic transistor was increased from $38mJ/m^2$ to $72mJ/m^2$ and the mobility of organic transistor was increased $0.057cm^2V^{-1}s^{-1}$, that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

Keywords

Plasma Polymerization Method;OTFT(organic thin film transistor);Plasma Treatment

Cited by

  1. Analysis of Electrical and Optical Characteristics of Silicon Based High Sensitivity PIN Photodiode vol.18, pp.6, 2014, https://doi.org/10.6109/jkiice.2014.18.6.1407

Acknowledgement

Supported by : 남서울대학교