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Implementation of the Radiation Protection Module for Electronic Equipment from Pulsed Radiation and Its Function Tests

펄스방사선에 대한 전자장비 방호용 모듈구현 및 기능시험

  • Lee, Nam-Ho (Dept. of Nuclear Convergence Technology Development, Korea Atomic Energy Research Institute)
  • Received : 2013.02.18
  • Accepted : 2013.09.24
  • Published : 2013.10.01

Abstract

The electronic equipment which is exposed to high level pulsed radiation is damaged by Upset, Latchup, and Burnout. Those damages come from the instantaneous photocurrent from electron-hole pairs generated in itself. Such damages appear as losses of a power in military weapon system or as a blackout in aerospace equipment and eventually caused in gross loss of national power. In this paper, we have implemented a RDC(Radiation detection and control module) as a part of the radiation protection technology of the electronic equipment or devices from the pulsed gamma radiation. The RDC, which is composed of pulsed gamma-ray detection sensor, signal processors, and pulse generator, is designed to protect the an important electronic circuits from the a pulse radiation. To verify the functionality of the RDC, LM118s, which had damaged by the pulse radiation, were tested. The test results showed that the test sample applied with the RDC was worked well in spite of the irradiation of a pulse radiation. Through the experiments we could confirm that the radiation protection technology implemented with the RDC had the functionality of radiation protection for the electronic devices.

Acknowledgement

Supported by : National Research Foundation of Korea(NRF)

References

  1. Seung-Chan Oh, Nam-Ho Lee, Heung-Ho Lee, "The Study Transient Radiation Effects on Commercial Electronic Devices", The Transactions of the Korean Institute of Electrical Engineers, Vol.61, No. 10, pp. 1448-1453, 2012. https://doi.org/10.5370/KIEE.2012.61.10.1448
  2. Sang-Hun Jeong, Nam-Ho Lee, Min-Su Lee, Seong-Ik Cho, "A Study of CMOS Device Latch-up Model with Transient Radiation", The Transactions of the Korean Institute of Electrical Engineers, Vol.61, No. 3, pp. 422-426, 2012. https://doi.org/10.5370/KIEE.2012.61.3.422
  3. Messenger G. C., "Transient Radiation Effects on Electronics", IEEE Transactions on Nuclear Science, vol. 33, no. 5, pp. 1125, 1986. https://doi.org/10.1109/TNS.1986.4334550
  4. Darwish M. N., Dolly M C., Goodwin C. A., "Radiation Effects on Power Integrated Circuits", IEEE Transactions on Nuclear Science, vol. 35, no. 6, pp. 1547-1551, 1988. https://doi.org/10.1109/23.25495
  5. Chugg A. M., "Ionising Radiation effects: a vital issue for semiconductor electonics", Engineering Science and Education Journal, vol. 3, no. 3, pp. 123-130, 1994. https://doi.org/10.1049/esej:19940310
  6. Sullivan D. C., "Transient Radiation-Induced Response of MOS Field Effect Transistors", IEEE Transactions on Nuclear Science, vol. 12, no. pp. 31-37, 1965.
  7. Johnson A. H., Swift G. M., Edmonds L. D., "Latchup in Integrated Circuits from Energetic Protons", IEEE Transactions on Nuclear Science, vol. 44, no. 6, pp. 2367-2467, 1997. https://doi.org/10.1109/23.659064
  8. Nam-ho Lee, Seung-Chan Oh, Sang-Hun Jeong, "Transient Gamma-ray Pulse Radiation Damage Analysis of Electronic Devices Used in Millitary Equipment", 2012 the Korea Institute of Millitary Scinece and Technology Conference, 2012.
  9. Alexander D. R. , "Transient Ionizing Radiation Effects in Devices and Circuits", IEEE Transactions on Nuclear Science, No. 3, pp. 565-582, 2003.

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