Atomic Layer Deposition of HfO2 Films on Ge

Cho, Young Joon;Chang, Hyo Sik

  • 투고 : 2014.01.09
  • 심사 : 2014.01.31
  • 발행 : 2014.01.30


We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.


Atomic layer deposition;$HfO_2$;Ge;GeO;Growth;Annealing


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연구 과제 주관 기관 : Chungnam National University