Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method

  • Received : 2014.01.13
  • Accepted : 2014.01.28
  • Published : 2014.01.30


In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.


Thin film;PECVD;N-doped ethylcyclohexene plasma-polymer;Optical and chemical properties


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Supported by : National Research Foundation of Korea (NRF)