Numerical Modeling of an Inductively Coupled Plasma Based Remote Source for a Low Damage Etch Back System

  • Joo, Junghoon (Graduate Program of Plasma Convergence Engineering & Plasma Materials Research Center, Kunsan National University)
  • Received : 2014.07.22
  • Accepted : 2014.07.30
  • Published : 2014.07.30


Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.


  1. S. K. Kwon, D. H. Kim, and J. T. Baek, J. Cry. Growth, 198/199, 1039 (1999).
  2. Junghoon Joo, Proceedings of International Conference on Microelectronics and Plasma Technologies 2008, Jeju, 531.
  3. Yeonguk Kim, Wonkyun Yang, and Junghoon Joo, J. Kor. Inst. Surf. Eng., 41, 134 (2008).
  4. K. H. Lee, W. K. Lee, Y. K. Lee, S. W. Jo, and C. W. Chung, Sae Muli, 55, 28 (2007).
  5. PSK inc, Korean patent No. 10-2011-0110517.
  6. H. Xian-wei, L. Lin, G. Bing-liang, S. Zhong-ning et. al, Trans. Nonferrous Met. Soc. China, 21, 2087 (2011).
  7. E. Meeks, R. S. Larson, S. R. Vossen, and J. W. Shon, J. Electrochem. Soc., 144, 357 (1997).
  8. Junghoon Joo, J. Kor. Inst. Surf. Eng. 45, 174 (2012).
  9. Junghoon Joo, Thin Solid Films, 519, 6892 (2011).
  10. Sangwon Lee, J. Kor. Vac. Soc, 18, 176 (2009).
  11. CFD-ACE+ user manual module II, 197, 2013.