DOI QR코드

DOI QR Code

Numerical Modeling of an Inductively Coupled Plasma Based Remote Source for a Low Damage Etch Back System

  • Received : 2014.07.22
  • Accepted : 2014.07.30
  • Published : 2014.07.30

Abstract

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

Keywords

numerical modeling;inductively coupled plasma;etch back;gas inlet position;CFD-ACE+

References

  1. Yeonguk Kim, Wonkyun Yang, and Junghoon Joo, J. Kor. Inst. Surf. Eng., 41, 134 (2008). https://doi.org/10.5695/JKISE.2008.41.4.134
  2. K. H. Lee, W. K. Lee, Y. K. Lee, S. W. Jo, and C. W. Chung, Sae Muli, 55, 28 (2007).
  3. PSK inc, Korean patent No. 10-2011-0110517.
  4. H. Xian-wei, L. Lin, G. Bing-liang, S. Zhong-ning et. al, Trans. Nonferrous Met. Soc. China, 21, 2087 (2011). https://doi.org/10.1016/S1003-6326(11)60977-1
  5. E. Meeks, R. S. Larson, S. R. Vossen, and J. W. Shon, J. Electrochem. Soc., 144, 357 (1997). https://doi.org/10.1149/1.1837410
  6. Junghoon Joo, J. Kor. Inst. Surf. Eng. 45, 174 (2012). https://doi.org/10.5695/JKISE.2012.45.4.174
  7. Junghoon Joo, Thin Solid Films, 519, 6892 (2011). https://doi.org/10.1016/j.tsf.2011.04.062
  8. Sangwon Lee, J. Kor. Vac. Soc, 18, 176 (2009). https://doi.org/10.5757/JKVS.2009.18.3.176
  9. CFD-ACE+ user manual module II, 197, 2013.
  10. S. K. Kwon, D. H. Kim, and J. T. Baek, J. Cry. Growth, 198/199, 1039 (1999). https://doi.org/10.1016/S0022-0248(98)01077-X
  11. Junghoon Joo, Proceedings of International Conference on Microelectronics and Plasma Technologies 2008, Jeju, 531.