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Hydrazine Doped Graphene and Its Stability

  • Song, MinHo (Department of Physics, Sejong University) ;
  • Shin, Somyeong (Department of Physics, Sejong University) ;
  • Kim, Taekwang (Department of Physics, Sejong University) ;
  • Du, Hyewon (Department of Physics, Sejong University) ;
  • Koo, Hyungjun (Department of Physics, Sejong University) ;
  • Kim, Nayoung (Micro Device&Machinery Solution Division, Samsung Techwin R&D Center) ;
  • Lee, Eunkyu (Micro Device&Machinery Solution Division, Samsung Techwin R&D Center) ;
  • Cho, Seungmin (Micro Device&Machinery Solution Division, Samsung Techwin R&D Center) ;
  • Seo, Sunae (Department of Physics, Sejong University)
  • Received : 2014.06.16
  • Accepted : 2014.07.30
  • Published : 2014.07.30

Abstract

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

Acknowledgement

Supported by : Sejong University

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