Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process

Sol-gel 법으로 합성된 SiC-C 복합분말을 사용하여 제조된 Si-SiC의 기계적 특성 및 전기저항 특성

  • Youn, Sung Il (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Cho, Gyung Sun (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Youm, Mi Rae (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Lim, Dae Soon (Department of Materials Science and Engineering, Korea University) ;
  • Park, Sang Whan (Interface Control Research Center, Korea Institute of Science and Technology)
  • 윤성일 (한국과학기술연구원 계면제어연구센터) ;
  • 조경선 (한국과학기술연구원 계면제어연구센터) ;
  • 염미래 (한국과학기술연구원 계면제어연구센터) ;
  • 임대순 (고려대학교 신소재공학과 나노복합재료 및 표면공학 연구실) ;
  • 박상환 (한국과학기술연구원 계면제어연구센터)
  • Published : 2014.09.30


In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.


Supported by : 지식경제부


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