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Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process

Sol-gel 법으로 합성된 SiC-C 복합분말을 사용하여 제조된 Si-SiC의 기계적 특성 및 전기저항 특성

  • Youn, Sung Il (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Cho, Gyung Sun (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Youm, Mi Rae (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Lim, Dae Soon (Department of Materials Science and Engineering, Korea University) ;
  • Park, Sang Whan (Interface Control Research Center, Korea Institute of Science and Technology)
  • 윤성일 (한국과학기술연구원 계면제어연구센터) ;
  • 조경선 (한국과학기술연구원 계면제어연구센터) ;
  • 염미래 (한국과학기술연구원 계면제어연구센터) ;
  • 임대순 (고려대학교 신소재공학과 나노복합재료 및 표면공학 연구실) ;
  • 박상환 (한국과학기술연구원 계면제어연구센터)
  • Published : 2014.09.30

Abstract

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

Acknowledgement

Supported by : 지식경제부

References

  1. M. A. Mulla and V. D. Cristic, "Mechanical Properties of SiC Pressureless Sintered with $Al_2O_3$ Additions," Acta Metall. Mater., 42 [1], 303-08 (1994). https://doi.org/10.1016/0956-7151(94)90072-8
  2. C. W. Forrest, P. Kennedy, and J. V. Shennan, The Fabrication and Properties of Self Bonded Silicon Carbide Bodies; pp. 99-127 in Special Ceramics Vol. 5. British Ceram., Res. Asso., U. K.,1972.
  3. P. Popper, Secial Cramics; pp. 209-19, Heywood & Co. London, 1960.
  4. C. W Forrest, P. Kennedy, and J. V. Shennan, Special Ceramics 5; pp. 99-123, British Ceramic Research Association, London, 1970.
  5. K. L. Luthra, R. N. Singh, and M. K. Brun, "Toughened Silcomp Composites : Process and Preliminary Properties," Am. Ceramic Soc. Bull., 72 [7], 79-85 (1993).
  6. G. M. Kim, G. S. Cho, and S. W. Park, "Effects of ${\beta}$-SiC Particle Seeds on Morphology and Size of High Purity ${\beta}$-SiC powder Synthesized Using Sol-gel Process," J. Kor. Ceram. Soc., 46, 523-33 (2009). https://doi.org/10.4191/KCERS.2009.46.5.528
  7. T. Kanekoa, D. Nemotoa, A. Horiguchia, and N. Miyakawab, "FTIR Analysis of ${\alpha}$-SiC:H Films Grown by Plasma Ehanced CVD," J. Crystal Growth, 275, e1097-101 (2005). https://doi.org/10.1016/j.jcrysgro.2004.11.128
  8. S. Suyama, T. Kameda, and Y. Itoh, "Development of High-strength Reaction-sintered Silicon Carbide," Diamond Relat. Mater., 12 [3-7], 1201-04 (2003). https://doi.org/10.1016/S0925-9635(03)00066-9
  9. Y. S. Jeon, H. H. Shin, Y. H. Lee, and S.-W. Kang, "Reduced Electrical Resistivity of Reaction-sintered SiC by Nitrogen Doping," J. Mater. Res., 23 [4], (2008).
  10. Y. S. Jeon, H. H. Shin, D. J. Yoo, and S. O. Yoon, "Electrical Resistivity and NTC/PTC Transition Point of a Nitrogen-Doped SiC Igniter, and Their Correlation to Electrical Heating Properties," J. Kor. Ceram. Soc., 49 [1], 124-29 (2012). https://doi.org/10.4191/kcers.2012.49.1.124
  11. Y. J. Kim, Y. S. Park, Y. W. Jung, J. B. Song, S. Y. Park, and H. J. Im, "A Study on the Mechanical Properties and Specific Resistivity of Reaction-bonded Silicon Carbide According to ${\alpha}$-SiC of Various Mixed Particle Size," J. Kor. Soc. Composite Mater., 25 [6], 172-77 (2012). https://doi.org/10.7234/kscm.2012.25.6.172