DOI QR코드

DOI QR Code

Effect of the Control of Bowing in Free-standing GaN by Mechanical Polishing

Freestanding GaN 기판의 Ga-polar 면에 기계적 연마 방법을 적용한 Bow 제어 및 그 특성 연구

  • Gim, Jinwon (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Son, Hoki (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lim, Tae-Young (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Mijai (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Jin-Ho (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Jung, Jung-Young (LumiGNtech) ;
  • Oh, Hae-Kon (LumiGNtech) ;
  • Kim, Jin-Hun (LumiGNtech) ;
  • Choi, YoungJun (LumiGNtech) ;
  • Lee, Hae-Yong (LumiGNtech) ;
  • Yoon, Dae-Ho (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • 김진원 (한국세라믹기술원 광디스플레이소재팀) ;
  • 손호기 (한국세라믹기술원 광디스플레이소재팀) ;
  • 임태영 (한국세라믹기술원 광디스플레이소재팀) ;
  • 이미재 (한국세라믹기술원 광디스플레이소재팀) ;
  • 김진호 (한국세라믹기술원 광디스플레이소재팀) ;
  • 전대우 (한국세라믹기술원 광디스플레이소재팀) ;
  • 황종희 (한국세라믹기술원 광디스플레이소재팀) ;
  • 정정영 (루미지엔테크) ;
  • 오해곤 (루미지엔테크) ;
  • 김진훈 (루미지엔테크) ;
  • 최영준 (루미지엔테크) ;
  • 이혜용 (루미지엔테크) ;
  • 윤대호 (성균관대학교 신소재공학부)
  • Received : 2015.10.30
  • Accepted : 2015.11.24
  • Published : 2015.12.01

Abstract

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

Acknowledgement

Supported by : 산업통상자원부

References

  1. S. Nakamura, T. Mukai, and M. Senon, Appl. Phys. Lett., 64, 1687 (1994). [DOI: http://dx.doi.org/10.1063/1.111832] https://doi.org/10.1063/1.111832
  2. C. D. Thurmond and R. A. Rogan, J. Electrochem. Soc., 119, 622 (1972). [DOI: http://dx.doi.org/10.1149/1.2404274] https://doi.org/10.1149/1.2404274
  3. C. R. Miskys, M. K. Kelly, O. Ambacher, and M. Stutzmann, Phys. Stat. Sol. C, 0, 1627 (2003). [DOI: http://dx.doi.org/10.1002/pssc.200303140] https://doi.org/10.1002/pssc.200303140
  4. M. Mynbaeva, A. Sitnikova, A. Tregubova, and K. Mynbaev, J. Cryst. Growth, 303, 472 (2007). [DOI: http://dx.doi.org/10.1016/j.jcrysgro.2006.12.041] https://doi.org/10.1016/j.jcrysgro.2006.12.041
  5. E. M. Goldys, T. Paskova, I. G. Ivanov, B. Arnaudov, and B. Monemar, Appl. Phys. Lett., 73, 3583 (1998). [DOI: http://dx.doi.org/10.1063/1.122831] https://doi.org/10.1063/1.122831
  6. B. Monemar, H. Larsson, C. Hemmingsson, I. G. Ivanov, and D. Gogova, J. Cryst. Growth, 281, 17 (2005). [DOI: http://dx.doi.org/10.1016/j.jcrysgro.2005.03.040] https://doi.org/10.1016/j.jcrysgro.2005.03.040
  7. D. L. Rousseau and J. Raman, Spectrosc., 10, 94 (1981). [DOI: http://dx.doi.org/10.1002/jrs.1250100116] https://doi.org/10.1002/jrs.1250100116
  8. P. Perlin, C. Jauberbie-Carillon, J. P. Itie, A. S. Miguel, I. Grzegory, and A. Polian, Phys. Rev. B, 45, 83 (1992). [DOI: http://dx.doi.org/10.1103/PhysRevB.45.83] https://doi.org/10.1103/PhysRevB.45.83
  9. C. Kisielowski, J. Krueger, S. Ravimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B, 54, 17745 (1996). [DOI: http://dx.doi.org/10.1103/PhysRevB.54.17745] https://doi.org/10.1103/PhysRevB.54.17745
  10. M. Seon, T. Prokfyeva, M. Holtz, S. A. Nikishin, N. N. Fleev, and H. Temkin, Appl. Phys. Lett., 76, 1842 (2000). [DOI: http://dx.doi.org/10.1063/1.126186] https://doi.org/10.1063/1.126186
  11. T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S. A. Nikishin, N. N. Fleev, H. Temkin, and S. Zollner, Phys. Lett., 76, 1842 (2000).
  12. Y. J. Choi, H. K Oh, J. G. Kim, H. H. Hwang, H. Y. Lee, W. J. Lee, B. C. Shin, and J. H. Hwang, Phys. Status Solidi, C, 7, 1770 (2010). [DOI: http://dx.doi.org/10.1002/pssc.200983632] https://doi.org/10.1002/pssc.200983632
  13. C. Nootz, A. Schulte, and L. Chernyak, Appl. Phys. Lett., 80, 1355 (2002). [DOI: http://dx.doi.org/10.1063/1.1449523] https://doi.org/10.1063/1.1449523