DOI QR코드

DOI QR Code

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices

ITO 나노와이어 기반의 투명 산화물 반도체 광전소자

  • Received : 2015.10.18
  • Accepted : 2015.11.04
  • Published : 2015.12.01

Abstract

Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

Keywords

Transparent photoelectric devices;ITO nanowires;NiO;ZnO;Heterojunction

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Acknowledgement

Supported by : Korea Institute of Energy Technology Evaluation and Planning