Electrical properties of piezoelectric PZT thick film by aerosol deposition method

에어로졸 증착법에 의한 압전 PZT 후막의 전기적 특성

  • Received : 2015.10.23
  • Accepted : 2015.11.06
  • Published : 2015.12.31


Lead zirconate titanate (PZT) thick films with thickness of $10{\sim}20{\mu}m$ were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the $10{\mu}m$ thick film with solid reaction process were $20{\mu}C/cm^2$, 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.


PZT powder;Sol-gel process;Aerosol deposition method;Dielectric constant;Piezoelectric coefficient;Hysteresis loop;Remnant polarization;Coercive field


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Supported by : 부경대학교