Investigation of Post Annealing Effect on the PZT Thin Films

Choi, Sujin;Park, Juyun;Koh, Sung-Wi;Kang, Yong-Cheol

  • 투고 : 2015.11.08
  • 심사 : 2015.12.25
  • 발행 : 2015.12.30


The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.


Thin Film;X-ray Diffraction;Lead Zirconate Titanate


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연구 과제 주관 기관 : Pukyong National University