DOI QR코드

DOI QR Code

Newly Designed Ion Beam Etcher with High Etch Rate

  • Cheong, Hee-Woon (Department of Electrical and Computer Engineering, Seoul National University)
  • Received : 2015.11.17
  • Accepted : 2015.12.14
  • Published : 2015.12.31

Abstract

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

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