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Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile

비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL

  • Received : 2015.10.02
  • Accepted : 2015.11.09
  • Published : 2015.11.30

Abstract

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

Keywords

asymmetric double gate;drain induced barrier lowering;Poisson equation;channel doping profile

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