Deformation of Amorphous GeSe2 Film under Uniaxial Pressure Applied at Elevated Temperatures

  • Jin, Byeong Kyou (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Lee, Jun Ho (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Yi, Jeong Han (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Lee, Woo Hyung (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Shin, Sang Yeol (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Choi, Yong Gyu (Department of Materials Science and Engineering, Korea Aerospace University)
  • Received : 2015.01.12
  • Accepted : 2015.02.11
  • Published : 2015.03.31


In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.


Chalcogenide glass;Amorphous Ge-Se film;Imprinting;Surface crystallization


Supported by : National Research Foundation of Korea (NRF)


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