High-Efficiency GaN-HEMT Doherty Power Amplifier with Compact Harmonic Control Networks

간단한 구조의 고조파 정합 네트워크를 갖는 GaN-HEMT 고효율 Doherty 전력증폭기

  • Received : 2015.07.03
  • Accepted : 2015.09.22
  • Published : 2015.09.30


This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.


Doherty Power Amplifier;Harmonic Impedance Control;GaN-HEMT;LTE


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Supported by : 한국연구재단