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Graphene Transistor Modeling Using MOS Model

MOS 모델을 이용한 그래핀 트랜지스터 모델링

  • Received : 2015.07.13
  • Accepted : 2015.09.17
  • Published : 2015.09.30

Abstract

Graphene is a single layer of carbon material which shows very high electron mobility, so many kinds of research on the devices using graphene layer have been performed so far. Graphene material is adequate for high frequency and fast operation devices due to its higher mobility. In this research, the actual graphene layer is evaluated using RT-CVD method which can be available for mass production. The mobility of $7,800cm^2/Vs$ was extracted, that is more than 7 times of that in silicon substrate. The graphene transistor model having no band gap is evaluated using both of pMOS and nMOS based on the measured mobility values. And then the response of graphene transistor model regarding to gate length and width is examined.

Keywords

Graphene;Model;Mobility;RT-CVD;Gate Length;Gate Width

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Acknowledgement

Supported by : 산업통상자원부